Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films

architecture and engineering of nanoscale sculptured thin films and determination of their properties

چکیده ندارد.

Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

We have observed visible photoluminescence (PL) spectra (peak energy: 3.1 eV) of size-controlled silicon (Si) nanoparticles annealed in oxygen gas. The PL peak energy did not depend on the temperature, and the PL lifetime was relatively fast (on the order of nanoseconds). It was inferred that the visible PL was attributed to localized states in the oxidized surfaces of size-controlled Si nanopa...

The effect of dielectric confinement on photoluminescence of In2O3-SiO2 nanocomposite thin films incorporated by nitrogen

Defect-related infrared photoluminescence in Ge-implanted SiO2 films

SiO2 films with Ge 1 implantation at an energy of 60 keV and a dose of 1310 cm, followed by annealing at different temperature, exhibit a broad infrared photoluminescence ~PL! at room temperature under an excitation of the 514.5 nm line of Ar laser. With increasing the annealing temperature, the intensity of the infrared PL band decreases, its full width at half maximum increases, and its energ...

Time-resolved photoluminescence of implanted SiO2:Si+ films

0022-3093/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.jnoncrysol.2009.01.048 * Corresponding author. Tel.: +7 9086312122. E-mail addresses: [email protected], fmpk_john@ In this paper we present results of a low-temperature time-resolved photoluminescence (PL) investigation of thin SiO2 films implanted with silicon ions. In addition to the luminescence of well-known ODCs, some other ...